cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 1/ 9 MTN7451J3 cystek product specification n-channel enhancement mode power mosfet MTN7451J3 bv dss 150v i d 24a r ds(on) @v gs =10v, i d =4a 54m (typ) r ds(on) @v gs =6v, i d =2a 57m (typ) features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package ? pb-free lead plating and halogen-free package symbol outline MTN7451J3 to-252(dpak) g gate d drain g d s s source ordering information device package shipping MTN7451J3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 2/ 9 MTN7451J3 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 150 gate-source voltage v gs 30 v continuous drain current @ t c =25 c, v gs =10v 24 continuous drain current @ t c =100c, v gs =10v i d 15 pulsed drain current (note 1) i dm 50 avalanche current i as 24 a avalanche energy @ l=0.3mh, i d =24a, r g =25 e as 86 repetitive avalanche energy@ l=0.05mh (note 2) e ar 9 mj total power dissipation @ t c =25 90 total power dissipation @ t c =100 pd 36 w operating junction and storage temp erature range tj, tstg -55~+150 c note : 1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.39 thermal resistance, junction-to-ambient, max r th,j-a 50 (note) thermal resistance, junction-to-ambient, max r th,j-a 110 c/w note : when mounted on the minimu m pad size recommended (pcb mount), t 10s. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 150 - - v v gs =0v, i d =250 a v gs(th) 2 3 4 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 30, v ds =0v - - 1 v ds =120v, v gs =0v i dss - - 25 a v ds =120v, v gs =0v, tj=125 c - 54 70 v gs =10v, i d =4a *r ds(on) - 57 75 m v gs =6v, i d =2a *g fs - 12 - s v ds =10v, i d =4a dynamic *qg - 18 - *qgs - 4.5 - *qgd - 6.7 - nc v ds =75v, i d =4a, v gs =10v *t d(on) - 13 - *tr - 18 - *t d(off) - 35 - *t f - 15 - ns v ds =75v, i d =4a, v gs =10v, r gs =6
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 3/ 9 MTN7451J3 cystek product specification ciss - 1284 - coss - 128 - crss - 56 - pf v ds =25v,v gs =0v, f=1mhz source-drain diode *i s - - 4 *i sm - - 16 a *v sd - 0.75 1.2 v i f =4a, v gs =0v *trr - 120 - ns *qrr - 220 - nc i f =4a, v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 4/ 9 MTN7451J3 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 024681 0 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v 10v, 9v, 8v, 7v, 6v v ds , drain-source voltage(v) i d , drain current(a) v gs =5v v gs =4v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0 0.5 1 1.5 2 2.5 3 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =4a r ds( on) @tj=25c : 54m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =4a
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 5/ 9 MTN7451J3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 048121620 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =4a v ds =75v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) r ds( on) limit dc 10ms 1ms 100 s 10 s t c =25c, tj=150c v gs =10v, r jc =1.39c/w single pulse 100ms maximum drain current vs case temperature 0 5 10 15 20 25 30 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =1.39c/w
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 6/ 9 MTN7451J3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 35 40 45 50 0246810 vgs, gate-source voltage(v) i d , drain current (a) v ds =10v power derating curve 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 t c , case temperature() p d , power dissipation(w) transient thermal response curves 0.01 0.1 1 10 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=1.39 c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 7/ 9 MTN7451J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 8/ 9 MTN7451J3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 150 c 200 c 60-120 seconds 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) ? time (t l ) 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds temperature(tp) 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c841j3 issued date : 2012.05.04 revised date : 2013.12.30 page no. : 9/ 9 MTN7451J3 cystek product specification to-252 dimension inches millimeters inches millimeters marking: style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-252 plastic surface mount package cystek package code: j3 device name date code 7451 1 2 3 4 dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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